savantic semiconductor product specification silicon npn power transistors 2SD1396 d escription with to-3pn package built-in damper diode high voltage ,high reliability high speed switching applications for horizontal output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 2.5 a i cm collector current-peak 10 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1396 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector- emitter breakdown voltage i c =100ma; r be = < 800 v v (br)cbo collector-base breakdown voltage i c =5ma; i e =0 1500 v v (br)ebo emitter-base breakdown voltage i e =200ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =2a; i b =0.6a 8.0 v v besat base-emitter saturation voltage i c =2a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ebo emitter cut-off current v eb =4v; i c =0 40 130 ma h fe dc current gain i c =0.5a ; v ce =5v 8 f t transition frequency i c =0.5a ; v ce =10v 3 mhz t f fall time i c =2a;i b1 =0.6a; i b2 =-1.2a, v cc =200v; r l =100 c 0.7 s v f diode forward voltage i ec =2.5a 2.0 v
savantic semiconductor product specification 3 silicon npn power transistors 2SD1396 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
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